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dc.contributor.authorLi, Hung-Hsienen_US
dc.contributor.authorLin, Albert S.en_US
dc.contributor.authorZhong, Yan-Kaien_US
dc.contributor.authorFu, Sze-Mingen_US
dc.contributor.authorLai, Shih-Yunen_US
dc.contributor.authorTseng, Chi-Weien_US
dc.contributor.authorLin, Shang-Ruen_US
dc.contributor.authorLai, Wei-Mingen_US
dc.contributor.authorLin, Yu-Chiunen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:36:39Z-
dc.date.available2014-12-08T15:36:39Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-3299-3en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/25002-
dc.description.abstractThe low cost and high absorbance is the two most important considerations for thin-film silicon photovoltaics. In this work, aluminum doped zinc oxide(AZO) nanowire is grown by low cost hydrothermal method and nano-structured amorphous silicon(alpha-Si) solar cell is realized on these AZO nanowire substrate. The experimental result shows superior light trapping property compared to conventional planar structure with 18.83% improvement in photocurrent. Simulation result shows the required thickness for full absorption for high aspect ratio AZO nanowire solar cell is similar to 0.3 square m, much thinner than planar type solar cell. The calculation reveals that solar cell absorbance increases with the nanowire length and packing density, indicating material volume is the first order effect for nanowire solar cells. The proposed low-cost AZO nanowire array amorphous silicon solar cell is very promising for future nanostructured silicon photovoltaics.en_US
dc.language.isoen_USen_US
dc.subjectNanowireen_US
dc.subjectphotovoltaic cellsen_US
dc.subjectsiliconen_US
dc.subjectlight trappingen_US
dc.titleExperimental and Theoretical Study of Low-Cost Hydrothermally Grown Nanowire Silicon Solar Cellen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage589en_US
dc.citation.epage593en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000340054100135-
Appears in Collections:Conferences Paper