Numerical Study of Graded Bandgap Solar Cells

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DC 欄位	值	語言
dc.contributor.author	Tan, Ming-Hsuan	en_US
dc.contributor.author	Tseng, Hung-Ruei	en_US
dc.contributor.author	Lo, Yen-Hua	en_US
dc.contributor.author	Hsu, Shun-Chieh	en_US
dc.contributor.author	Tsai, Che-Pin	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.date.accessioned	2014-12-08T15:36:39Z	-
dc.date.available	2014-12-08T15:36:39Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4799-3299-3	en_US
dc.identifier.issn	0160-8371	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25006	-
dc.description.abstract	A novel idea of graded band gap design in intrinsic-layer is proposed and studied numerically. We built our device model by using Matlab (R) coding and commercial software APSYS (R). The device performance is calculated by continuity equations, and effective band gap model. The final calculation shows the optimal efficiency enhancement is about 1.32 and 2.18 times of the non-grading band gap device in GaAs and GaN system, respectively.	en_US
dc.language.iso	en_US	en_US
dc.subject	graded band gap	en_US
dc.subject	simulation	en_US
dc.subject	photovoltaic cells	en_US
dc.subject	MATLABO (R)	en_US
dc.subject	APSYSO (R)	en_US
dc.title	Numerical Study of Graded Bandgap Solar Cells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)	en_US
dc.citation.spage	1914	en_US
dc.citation.epage	1918	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.identifier.wosnumber	WOS:000340054100427	-
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