標題: Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure
作者: Wang, Hsun-Wen
Hsieh, Chi-Chang
Lai, Fang-I
Lin, Shiuan-Huei
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: photovoltaic cells;InGaN;MQW
公開日期: 2013
摘要: The photovoltaic properties of 14 pairs In0.15Ga0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In0.15Ga0.85N/GaN MQW solar cell had V-oc of 2.37V, J(sc) of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.
URI: http://hdl.handle.net/11536/25007
ISBN: 978-1-4799-3299-3
ISSN: 0160-8371
期刊: 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始頁: 2136
結束頁: 2138
顯示於類別:會議論文