完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLai, Yi-Chunen_US
dc.contributor.authorWu, Bing-Shuen_US
dc.contributor.authorYu, Shu-Chengen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.date.accessioned2014-12-08T15:36:39Z-
dc.date.available2014-12-08T15:36:39Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-3299-3en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/25009-
dc.description.abstractSilicon-based hybrid solar cells have garnered extensive attentions in the photovoltaics industry due to easy processing attributes and high optical absorption and outstanding carrier mobility of silicon. Among all, indium tin oxide (ITO)/silicon solar cells have achieved a power conversion efficiency of 13% due to excellent conductivity, transmittance and applicable surface potential of ITO. However, the cost of ITO has risen significantly recently due to the deficiency of indium. Therefore, graphene has been an inexpensive alternative to ITO. For solar cell applications, graphene plays an important role as transparent electrodes (TE) with tunable work functions for efficient carrier collection. Therefore, graphene-based Schottky junction solar cells (SJSC) on crystalline silicon thin films hold great promises for low-cost photovoltaics owing to potentials for high efficiency and rapid production on flexible substrates. According to previous reports, the key factors to achieve a highly efficient SJSC include excellent transparence and conductance, as well as tunable work functions. Herein, we demonstrate a single layer graphene/n-Si Schottky junction solar cell that exhibits a power conversion efficiency (PCE) of 1.2 % under one-sun AM 1.5G illumination, and an integrated short-circuit photocurrent of 18.3 mA/cm(2) from the external quantum efficiency measurement. The transmittance of the monolayer graphene in this device is over 97 % and the sheet resistance is around 800 to 1200 Omega/square. Furthermore, we investigate a doping method involving bis(trifluoromethanesulfonyl)-amid (TFSA) for the monolayer graphene to improve the separation and collection of photogenerated carriers in the SJSC. The preliminary data show that the sheet resistance is decreased rapidly from 1200 to 300 Omega/square. and the surface potential is also adjusted by the chemical doping. Currently, device fabrication with doped monolayer graphene is still in process and complete characterization data will be presented.en_US
dc.language.isoen_USen_US
dc.subjectSchottky junction solar cellen_US
dc.subjectchemical dopingen_US
dc.subjectphotovoltaicen_US
dc.subjectgrapheneen_US
dc.titleDoping of Monolayer Graphene for Silicon based Schottky Junction Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage2436en_US
dc.citation.epage2438en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000340054100551-
顯示於類別:會議論文