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dc.contributor.authorHSIEH, WTen_US
dc.contributor.authorCHANG, KJen_US
dc.contributor.authorLI, WHen_US
dc.contributor.authorLEE, KCen_US
dc.contributor.authorLYNN, JWen_US
dc.contributor.authorLAI, CCen_US
dc.contributor.authorKU, HCen_US
dc.date.accessioned2019-04-03T06:39:10Z-
dc.date.available2019-04-03T06:39:10Z-
dc.date.issued1994-05-01en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.49.12200en_US
dc.identifier.urihttp://hdl.handle.net/11536/2500-
dc.description.abstractNeutron-scattering measurements have been performed to study the magnetic ordering of Pr and Cu in semiconducting TlBa2PrCu2O7-y. This compound has a nuclear structure which is similar to that of YBa2Cu3O7 but with the CuO-chain layers fully replaced by TlO layers. At low temperatures the magnetic diffraction pattern reveals magnetic Bragg peaks of the {1/2 1/2 1/2} type, which are associated with the antiferromagnetic ordering of the Pr moments. The magnetic structure consists of nearest-neighbor spins along all three crystallographic directions being antiparallel. The spin direction is along the c axis, with a saturated moment of 1.05 mu(B). The temperature dependence of the intensity of these reflections indicates a Neel temperature T(N) almost-equal-to 8 K, which is about half that observed in the related PrBa2Cu3O7 system. A second set of magnetic reflections, of the {1/2 1/2 1} type, are also observed, and these are associated with the Cu magnetic sublattice. This magnetic structure is identical to the ''plane ordering'' observed in the related 1:2:3 system, where the nearest-neighbor Cu spins are again antiparallel. The spin direction is in the tetragonal ab plane, with a saturated ordered moment of 0.59 mu(B). The temperature dependence indicates a Neel temperature of almost-equal-to 370 K for the Cu spins.en_US
dc.language.isoen_USen_US
dc.titleMAGNETIC-ORDERING OF PR AND CU IN TLBA2PRCU2O7-Yen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.49.12200en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume49en_US
dc.citation.issue17en_US
dc.citation.spage12200en_US
dc.citation.epage12205en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NL64300076en_US
dc.citation.woscount22en_US
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