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dc.contributor.authorUENG, SYen_US
dc.contributor.authorCHAO, TSen_US
dc.contributor.authorWANG, PJen_US
dc.contributor.authorCHEN, WHen_US
dc.contributor.authorCHANG, DCen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:04:00Z-
dc.date.available2014-12-08T15:04:00Z-
dc.date.issued1994-05-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.285043en_US
dc.identifier.urihttp://hdl.handle.net/11536/2502-
dc.description.abstractThin oxides thermally grown on reactive-ion-etched silicon surfaces in N2O ambient have been studied. As compared with pure oxides grown on the etched silicon in dry oxygen, N2O-grown oxides exhibit significantly stronger immunity to the RIE-induced damages. A great improvement in both time-zero-dielectric-breakdown (TZDB) and time-dependent-breakdown (TDDB) characteristics is observed for the N2O-grown oxides on RIE-treated silicon surfaces. Accelerated tests have shown that the N2O oxide grown on the RIE silicon surface can achieve a lifetime longer than the pure oxide grown on the correspondingly etched silicon surface with a factor over 10(8).en_US
dc.language.isoen_USen_US
dc.titleSUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENTen_US
dc.typeNoteen_US
dc.identifier.doi10.1109/16.285043en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume41en_US
dc.citation.issue5en_US
dc.citation.spage850en_US
dc.citation.epage851en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1994NN18500035-
dc.citation.woscount0-
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