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dc.contributor.authorChang, Yi-Anen_US
dc.contributor.authorChen, Fang-Mingen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorChang, Ching-Wenen_US
dc.contributor.authorChen, Kuo-Juen_US
dc.contributor.authorLi, Shan-Rongen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorKuo, Yen-Kuangen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorTu, Li-Weien_US
dc.date.accessioned2014-12-08T15:36:42Z-
dc.date.available2014-12-08T15:36:42Z-
dc.date.issued2014-08-25en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.22.0A1334en_US
dc.identifier.urihttp://hdl.handle.net/11536/25056-
dc.description.abstractIn this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (V-oc) from 1.88 to 1.94 V and short-circuit current density (J(sc)) from 0.84 to 1.02 mA/cm(2) are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical front-side illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the J(sc) could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors. (C) 2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleFabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.22.0A1334en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume22en_US
dc.citation.issue17en_US
dc.citation.spageA1334en_US
dc.citation.epageA1342en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000340717300014-
dc.citation.woscount0-
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