完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Yi-An | en_US |
dc.contributor.author | Chen, Fang-Ming | en_US |
dc.contributor.author | Tsai, Yu-Lin | en_US |
dc.contributor.author | Chang, Ching-Wen | en_US |
dc.contributor.author | Chen, Kuo-Ju | en_US |
dc.contributor.author | Li, Shan-Rong | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Kuo, Yen-Kuang | en_US |
dc.contributor.author | Yu, Peichen | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.contributor.author | Tu, Li-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:36:42Z | - |
dc.date.available | 2014-12-08T15:36:42Z | - |
dc.date.issued | 2014-08-25 | en_US |
dc.identifier.issn | 1094-4087 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OE.22.0A1334 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25056 | - |
dc.description.abstract | In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (V-oc) from 1.88 to 1.94 V and short-circuit current density (J(sc)) from 0.84 to 1.02 mA/cm(2) are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical front-side illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the J(sc) could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors. (C) 2014 Optical Society of America | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OE.22.0A1334 | en_US |
dc.identifier.journal | OPTICS EXPRESS | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 17 | en_US |
dc.citation.spage | A1334 | en_US |
dc.citation.epage | A1342 | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000340717300014 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |