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dc.contributor.authorMorozovska, Anna N.en_US
dc.contributor.authorEliseev, Eugene A.en_US
dc.contributor.authorIevlev, Anton V.en_US
dc.contributor.authorVarenyk, Olexander V.en_US
dc.contributor.authorPusenkova, Anastasiia S.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorShur, Vladimir Yaen_US
dc.contributor.authorStrikha, Maksym V.en_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.date.accessioned2014-12-08T15:36:43Z-
dc.date.available2014-12-08T15:36:43Z-
dc.date.issued2014-08-14en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4891310en_US
dc.identifier.urihttp://hdl.handle.net/11536/25067-
dc.description.abstractWe consider a typical heterostructure "domain patterned ferroelectric film-ultra-thin dielectric layer-semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleFerroelectric domain triggers the charge modulation in semiconductors (invited)en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4891310en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume116en_US
dc.citation.issue6en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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