Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor

Abstract

The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of I-off than that in JL planar TFTs. The measured partial derivative V-th/partial derivative T of -1.34 mV/degrees C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/degrees C in JL planar TFTs.