Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments

Abstract

In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation. (C) 2014 The Electrochemical Society. All rights reserved.