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dc.contributor.authorLIN, JKen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorHUANG, HSen_US
dc.contributor.authorCHEN, KLen_US
dc.contributor.authorKUO, DCen_US
dc.date.accessioned2014-12-08T15:04:01Z-
dc.date.available2014-12-08T15:04:01Z-
dc.date.issued1994-05-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.2513en_US
dc.identifier.urihttp://hdl.handle.net/11536/2517-
dc.description.abstractA new polysilicon-oxide-nitride-oxide-silicon (SONOS) electrically erasable programmable read-only memory (EEPROM) device, which eliminated off-cell leakage current, has been described and fabricated. The leakage current is easily encountered in metal-nitride-oxide-silicon (MNOS)-type EEPROMs. Two parasitic transistors, which are in parallel with the desired variable V(t) cell, are responsible for the leakage current. We demonstrated that the parasitic transistors are caused either by the nearly constant-threshold-voltage parasitic transistors surrounding the active region or by the ''fringing effect'' in poly-Si gate edges. The on-state and off-state I-V curves of the cell are shown and compared with those of two other different devices. The results reveal that the off-cell leakage current, which is observed in the other two devices, is completely eliminated in the proposed cell.en_US
dc.language.isoen_USen_US
dc.subjectSONOSen_US
dc.subjectEEPROMen_US
dc.subjectMNOSen_US
dc.subjectOFF-CELLen_US
dc.subjectLEAKAGE CURRENTen_US
dc.titleNEW POLYSILICON-OXIDE-NITRIDE-OXIDE-SILICON ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY DEVICE APPROACH FOR ELIMINATING OFF-CELL LEAKAGE CURRENTen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.2513en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue5Aen_US
dc.citation.spage2513en_US
dc.citation.epage2514en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994NU12600017-
dc.citation.woscount1-
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