標題: | Dynamic Observation of Phase Transformation Behaviors in Indium(III) Selenide Nanowire Based Phase Change Memory |
作者: | Huang, Yu-Ling Huang, Chun-Wei Chen, Jui-Yuan Ting, Yi-Hsin Lu, Kuo-Chang Chueh, Yu-Lun Wu, Wen-Wei 交大名義發表 材料科學與工程學系 National Chiao Tung University Department of Materials Science and Engineering |
關鍵字: | phase change;PCRAM;nanodevices;in situ TEM;nonvolatile memory;In2Se3 |
公開日期: | 1-九月-2014 |
摘要: | Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM. |
URI: | http://dx.doi.org/10.1021/nn503576x http://hdl.handle.net/11536/25192 |
ISSN: | 1936-0851 |
DOI: | 10.1021/nn503576x |
期刊: | ACS NANO |
Volume: | 8 |
Issue: | 9 |
起始頁: | 9457 |
結束頁: | 9462 |
顯示於類別: | 期刊論文 |