Double-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization process

doi:10.1063/1.4893713

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Yi-Chih	en_US
dc.contributor.author	Shieh, Han-Ping D.	en_US
dc.date.accessioned	2014-12-08T15:36:49Z	-
dc.date.available	2014-12-08T15:36:49Z	-
dc.date.issued	2014-08-18	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4893713	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25221	-
dc.description.abstract	A low-toxic selenization with post gallium diffusion (PGD) treatment has been demonstrated to increase the bandgap in the surface Cu(In,Ga)Se-2 (CIGSe) absorbers and to form double-graded bandgap profiles to improve the cell efficiency. The CIGSe absorber with PGD for 5 min increased open-circuit voltage from 0.49 to 0.66V and efficiency from 9.2% to 13.2%, contributed by the enhancement of carrier recombination in the space-charge region. The reduction in short-circuit current from 30.8 to 29.9 mA/cm(2), attributed to the absorption loss in long-wavelength regions, can be potentially improved by further optimization of the minimum bandgap value in gradient valley. (C) 2014 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Double-graded bandgap in Cu(In,Ga)Se-2 thin film solar cells by low toxicity selenization process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4893713	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	105	en_US
dc.citation.issue	7	en_US
dc.citation.epage		en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000341189800106	-
dc.citation.woscount	0	-
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