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dc.contributor.authorChang, Hui Linen_US
dc.contributor.authorChang, Chi Tsoen_US
dc.contributor.authorKuo, Cheng Tzuen_US
dc.date.accessioned2014-12-08T15:36:51Z-
dc.date.available2014-12-08T15:36:51Z-
dc.date.issued2014en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/25252-
dc.identifier.urihttp://dx.doi.org/10.1149/2.0181410jssen_US
dc.description.abstractThe synthesis of carbon-based materials, such as man-made diamonds, superhard C3N4 materials, SiCN crystals, and other carbon-based nanostructured materials, has attracted considerable attention for many decades in academic and industrial communities. However, so far, researchers have not successfully linked the growth mechanisms of carbon-based materials deposited under different synthetic conditions and methods. In fact, a single machine may produce many of these materials. This paper is aimed to study the linkages among various carbon-based materials synthesized on Si wafers using the same microwave plasma chemical vapor deposition system, including SiCN crystalline films, SiCN nanotubes, carbon nanotubes (CNTs), conical carbon nanorods, and other nanostructured materials. (C) The Author(s) 2014. Published by ECS. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleSynthesis and Characterization of Silicon and Nitrogen Containing Carbon-Based Crystals and Their Nanostructured Materialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.0181410jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume3en_US
dc.citation.issue10en_US
dc.citation.spageM65en_US
dc.citation.epageM70en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000341962100005-
dc.citation.woscount0-
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