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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChang, Chun-Yien_US
dc.contributor.authorChen, Ya-Weien_US
dc.contributor.authorChen, Yi-Jungen_US
dc.date.accessioned2014-12-08T15:36:51Z-
dc.date.available2014-12-08T15:36:51Z-
dc.date.issued2014en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/25254-
dc.identifier.urihttp://dx.doi.org/10.1149/2.012409jssen_US
dc.description.abstractIn this study, the time response behavior of the amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) to the illumination pulse is analyzed. The mechanism is proposed to correlate the oxygen vacancy reacting with the light-induced electron-hole pairs. The temperature effect on the time response to the illumination pulse is also studied. The higher excitation level, either from light or temperature, results in the similar excited and recovering behaviors. The formulas for the time response are proposed to be possibly used in the simulation for the circuit performance in real situation of illumination, which is important in the development of transparent electronics using a-IGZO TFT. (c) The Author(s) 2014. Published by ECS. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThe Time Response of the On-Current for the Amorphous In-Ga-Zn-O Thin Film Transistor to the Illumination Pulseen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.012409jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume3en_US
dc.citation.issue9en_US
dc.citation.spageQ3071en_US
dc.citation.epageQ3075en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000341962000014-
dc.citation.woscount1-
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