完整後設資料紀錄
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dc.contributor.authorChou, Wu Chingen_US
dc.contributor.authorTzou, An-Jyeen_US
dc.contributor.authorChen, Hsuan-Shaoen_US
dc.contributor.authorChien, Kun-Fengen_US
dc.contributor.authorFan, Wen-Chungen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.contributor.authorChen, Meei-Ruen_US
dc.contributor.authorKao, Hui-Lingen_US
dc.contributor.authorJeng, Syang-Ywanen_US
dc.contributor.authorLuc Huy Hoangen_US
dc.date.accessioned2014-12-08T15:36:52Z-
dc.date.available2014-12-08T15:36:52Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2014.2304674en_US
dc.identifier.urihttp://hdl.handle.net/11536/25273-
dc.description.abstractZn1-xMnxO films (0 <= x <= 0.070) were grown by plasma-assisted molecular beam epitaxy on Si substrates with AlN buffer layers. For low Mn concentration samples, x <= 0.02, photoluminescence spectra show strong near band edge emission. Strong phonon and exciton coupling-induced resonant Raman scattering was observed. Paramagnetic, antiferromagnetic, and ferromagnetic phases were observed. Room temperature ferromagnetism for all samples was attributed to the bound magnetic polaron effect.en_US
dc.language.isoen_USen_US
dc.titleOptical and Magnetic Properties of Zn1-xMnxO Grown by Plasma-Assisted Molecular Beam Epitaxyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2014.2304674en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume50en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000343033900014-
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