標題: Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance
作者: Lee, JR
Lu, CR
Lee, WI
Lee, SC
電子物理學系
Department of Electrophysics
關鍵字: photoreflectance;photoluminescence;InAs/GaAs;quantum dots
公開日期: 1-Jan-2005
摘要: We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and photoreflectance spectra from 10K to room temperature. The photoluminescence spectral profiles comprise contributions from four equally separated energy levels of InAs quantum dots. The emission profiles involving ground state and excited states have different temperature evolution. Abnormal spectral narrowing occurred above 200 K. In the photoreflectance spectra, major features corresponding to the InAs wetting layer and GaAs layers were observed. Temperature dependences of spectral intensities of these spectral features indicate that they originate from different photon-induced modulation mechanisms. Considering interband transitions of quantum dots were observed in photoluminescence spectra and those of wetting layer were observed in photoreflectance profiles, we propose that quantum dot states of the system are occupied up to the fourth energy level which is below the wetting layer quantum state. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.physe.2004.08.107
http://hdl.handle.net/11536/25310
ISSN: 1386-9477
DOI: 10.1016/j.physe.2004.08.107
期刊: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume: 25
Issue: 4
起始頁: 562
結束頁: 568
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