Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode

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DC 欄位	值	語言
dc.contributor.author	Wu, J. -Y.	en_US
dc.contributor.author	Lu, P. -K.	en_US
dc.contributor.author	Hsiao, Y. -J.	en_US
dc.contributor.author	Lin, S. -D.	en_US
dc.date.accessioned	2014-12-08T15:36:56Z	-
dc.date.available	2014-12-08T15:36:56Z	-
dc.date.issued	2014-10-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.39.005515	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25345	-
dc.description.abstract	We experimentally demonstrate the use of single-photon avalanche photodiode (SPAD) for radiometric temperature measurement. The low dark count rate CMOS SPAD and a commercial InGaAs/InP SPAD can detect the thermal radiation from a blackbody down to the temperatures of 510 and 405 K, respectively. Our work shows that current SPADs are cost-effective thermal sensors for various applications. (C) 2014 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Radiometric temperature measurement with Si and InGaAs single-photon avalanche photodiode	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.39.005515	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	19	en_US
dc.citation.spage	5515	en_US
dc.citation.epage	5518	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000343906400012	-
dc.citation.woscount	0	-
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