完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Shih-Chien | en_US |
dc.contributor.author | Chen, Bo-Yuan | en_US |
dc.contributor.author | Lin, Yueh-Chin | en_US |
dc.contributor.author | Hsieh, Ting-En | en_US |
dc.contributor.author | Wang, Huan-Chung | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2014-12-08T15:36:57Z | - |
dc.date.available | 2014-12-08T15:36:57Z | - |
dc.date.issued | 2014-10-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2014.2345130 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25354 | - |
dc.description.abstract | A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result. | en_US |
dc.language.iso | en_US | en_US |
dc.title | GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2014.2345130 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1001 | en_US |
dc.citation.epage | 1003 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000343011300009 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |