標題: Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
作者: Chand, Umesh
Huang, Chun-Yang
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2014
摘要: In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 degrees C) due to its higher Gibbs free energy value than TiOx.
URI: http://dx.doi.org/10.1109/LED.2014.2345782
http://hdl.handle.net/11536/25356
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2345782
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 10
起始頁: 1019
結束頁: 1021
顯示於類別:期刊論文