標題: High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-kappa Gate Dielectrics
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
Chen, Po-Chun
Chiu, Yu-Chien
Chiou, Ping
Cheng, Chin-Pao
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Oct-2014
摘要: This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-kappa SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 +/- 006 V, a low sub-threshold swing of 110 +/- 6 mV/decade and an extremely high mobility of 60.2 +/- 32 cm(2)/V s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.
URI: http://dx.doi.org/10.1109/JDT.2014.2331351
http://hdl.handle.net/11536/25365
ISSN: 1551-319X
DOI: 10.1109/JDT.2014.2331351
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 10
Issue: 10
結束頁: 
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