標題: Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition
作者: Yu, Hung-Wei
Wang, Tsun-Ming
Nguyen, Hong-Quan
Wong, Yuen-Yee
Tu, Yung-Yi
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2014
摘要: In this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90 degrees misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth. (C) 2014 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.4892519
http://hdl.handle.net/11536/25379
ISSN: 1071-1023
DOI: 10.1116/1.4892519
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 32
Issue: 5
起始頁: 0
結束頁: 0
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