完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yu, Hung-Wei | en_US |
dc.contributor.author | Wang, Tsun-Ming | en_US |
dc.contributor.author | Nguyen, Hong-Quan | en_US |
dc.contributor.author | Wong, Yuen-Yee | en_US |
dc.contributor.author | Tu, Yung-Yi | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-04-03T06:40:49Z | - |
dc.date.available | 2019-04-03T06:40:49Z | - |
dc.date.issued | 2014-09-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.4892519 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25379 | - |
dc.description.abstract | In this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90 degrees misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth. (C) 2014 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.4892519 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 32 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000343003600001 | en_US |
dc.citation.woscount | 3 | en_US |
顯示於類別: | 期刊論文 |