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dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorHSIEH, STen_US
dc.contributor.authorWU, WFen_US
dc.date.accessioned2014-12-08T15:04:02Z-
dc.date.available2014-12-08T15:04:02Z-
dc.date.issued1994-04-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://hdl.handle.net/11536/2542-
dc.description.abstractIndium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface.en_US
dc.language.isoen_USen_US
dc.titleELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATEen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume74en_US
dc.citation.issue4en_US
dc.citation.spage297en_US
dc.citation.epage302en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NE70400002-
dc.citation.woscount11-
Appears in Collections:Articles