Title: | ELECTRICAL BEHAVIOR OF LOW-POWER RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS ON SILICON SUBSTRATE |
Authors: | CHIOU, BS HSIEH, ST WU, WF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Apr-1994 |
Abstract: | Indium tin oxide (ITO) films were deposited onto p-Si substrates by RF magnetron sputtering. Small sputtering powers (less-than-or-equal-to 28 W) were supplied to a one-inch diameter target, and a low substrate temperature (< 80-degrees-C) was maintained during sputtering. The electrical behavior of the ITO films was explored. The relationship (carrier mobility) a (carrier concentration)-0.64 suggests an impurity scattering mechanism for the transport of charge carriers. A linear current-voltage characteristic and a voltage-independent capacitance indicate that the low-power sputtering process does not damage the ITO/p-Si interface. |
URI: | http://hdl.handle.net/11536/2542 |
ISSN: | 0169-4332 |
Journal: | APPLIED SURFACE SCIENCE |
Volume: | 74 |
Issue: | 4 |
Begin Page: | 297 |
End Page: | 302 |
Appears in Collections: | Articles |