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dc.contributor.authorLin, CJen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorChueh, YLen_US
dc.contributor.authorChou, LJen_US
dc.date.accessioned2014-12-08T15:37:06Z-
dc.date.available2014-12-08T15:37:06Z-
dc.date.issued2005en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/25472-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2109327en_US
dc.description.abstractLocalized synthesis of 4.2-5.6 nm Si nanocrystals (nc-Si) in plasma enhanced chemical vapor deposition-grown Si-rich SiOx (x = 1.25) (SRSO) layer is demonstrated using a CO2 laser annealing at intensity of 6.0 kW/cm(2). At an optimized surface temperature of 1285 C, the precipitated nc-Si in annealed SRSO results in near-infrared photoluminescence at 806 nm. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm(2). Transmission electron microscopy analysis reveals that the average size and volume density of nc-Si embedded in the SRSO layer are about 5.2 nm and 1.08 x 10(18) cm(-3). (c) 2005 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleSynthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2109327en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue12en_US
dc.citation.spageD43en_US
dc.citation.epageD45en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000232697800015-
dc.citation.woscount4-
Appears in Collections:Articles