標題: | Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing |
作者: | Lin, CJ Lin, GR Chueh, YL Chou, LJ 光電工程學系 Department of Photonics |
公開日期: | 2005 |
摘要: | Localized synthesis of 4.2-5.6 nm Si nanocrystals (nc-Si) in plasma enhanced chemical vapor deposition-grown Si-rich SiOx (x = 1.25) (SRSO) layer is demonstrated using a CO2 laser annealing at intensity of 6.0 kW/cm(2). At an optimized surface temperature of 1285 C, the precipitated nc-Si in annealed SRSO results in near-infrared photoluminescence at 806 nm. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm(2). Transmission electron microscopy analysis reveals that the average size and volume density of nc-Si embedded in the SRSO layer are about 5.2 nm and 1.08 x 10(18) cm(-3). (c) 2005 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/25472 http://dx.doi.org/10.1149/1.2109327 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.2109327 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 8 |
Issue: | 12 |
起始頁: | D43 |
結束頁: | D45 |
顯示於類別: | 期刊論文 |