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dc.contributor.authorChen, PLen_US
dc.contributor.authorHuang, WJen_US
dc.contributor.authorChang, JKen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorPan, FMen_US
dc.date.accessioned2014-12-08T15:37:07Z-
dc.date.available2014-12-08T15:37:07Z-
dc.date.issued2005en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/25480-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2030489en_US
dc.description.abstractA field emission triode device has been fabricated using self-organized nanodot arrays as the electron emission source. Uniform nanodot arrays of titanium oxide were prepared from the Al/Ti film stack on silicon substrates by electrochemical anodization. The field emission triodes with titanium oxide nanodot emitters exhibited a low gate turn-on voltage of 45 V and high emission current density of 25 mA/cm(2) at 120 V. The excellent electric properties and easily controllable fabrication process of the nanodot triodes show potential applications for field emission displays and vacuum microelectronics. (c) 2005 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleFabrication and field emission characteristics of highly ordered titanium oxide nanodot arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2030489en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue10en_US
dc.citation.spageH83en_US
dc.citation.epageH86en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000231390900047-
dc.citation.woscount12-
顯示於類別：期刊論文


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