標題: | Growth of chromium carbide capped-carbon nanotip using bias-assisted microwave plasma chemical vapor deposition |
作者: | Hsu, CH Shi, SC Chen, CF 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | chromium carbide;carbon nanotip;bias;microwave plasma chemical vapor deposition |
公開日期: | 22-十二月-2004 |
摘要: | Chromium carbide capped-carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped-carbon nanotips reaches a limit due to the full carburization of chromium. (C) 2004 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2004.08.072 http://hdl.handle.net/11536/25538 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2004.08.072 |
期刊: | THIN SOLID FILMS |
Volume: | 469 |
Issue: | |
起始頁: | 131 |
結束頁: | 134 |
顯示於類別: | 會議論文 |