標題: Growth of chromium carbide capped-carbon nanotip using bias-assisted microwave plasma chemical vapor deposition
作者: Hsu, CH
Shi, SC
Chen, CF
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chromium carbide;carbon nanotip;bias;microwave plasma chemical vapor deposition
公開日期: 22-十二月-2004
摘要: Chromium carbide capped-carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped-carbon nanotips reaches a limit due to the full carburization of chromium. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2004.08.072
http://hdl.handle.net/11536/25538
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.08.072
期刊: THIN SOLID FILMS
Volume: 469
Issue: 
起始頁: 131
結束頁: 134
顯示於類別:會議論文


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