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dc.contributor.authorCheng, YLen_US
dc.contributor.authorWang, Yen_US
dc.contributor.authorLan, JKen_US
dc.contributor.authorChen, HCen_US
dc.contributor.authorLin, JHen_US
dc.contributor.authorWu, Yen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorWu, Yen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:37:09Z-
dc.date.available2014-12-08T15:37:09Z-
dc.date.issued2004-12-22en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2004.08.159en_US
dc.identifier.urihttp://hdl.handle.net/11536/25539-
dc.description.abstractFor a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectlow-ken_US
dc.subjectcarrier gasen_US
dc.subjectplasma-enhanced chemical vapor depositionen_US
dc.titleEffect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2004.08.159en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume469en_US
dc.citation.issueen_US
dc.citation.spage178en_US
dc.citation.epage183en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000225724300032-
Appears in Collections:Conferences Paper


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