Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, YL | en_US |
dc.contributor.author | Wang, Y | en_US |
dc.contributor.author | Lan, JK | en_US |
dc.contributor.author | Chen, HC | en_US |
dc.contributor.author | Lin, JH | en_US |
dc.contributor.author | Wu, Y | en_US |
dc.contributor.author | Liu, PT | en_US |
dc.contributor.author | Wu, Y | en_US |
dc.contributor.author | Feng, MS | en_US |
dc.date.accessioned | 2014-12-08T15:37:09Z | - |
dc.date.available | 2014-12-08T15:37:09Z | - |
dc.date.issued | 2004-12-22 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2004.08.159 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25539 | - |
dc.description.abstract | For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition (PE-CVD) with trimethylsilane (3MS), oxygen, and the carrier gas. In this work, we present the effects of the carrier gas on the characterizations of the low-k films, including reaction mechanism, the deposition rate, and the mechanical and electrical properties. According to the experimental results, the low-k film in Ar carrier gas exhibits the improvement in deposition rate, nonuniformity, leakage current, and hardness. In addition, the dielectric constant of the deposited low-k film is slightly sacrificed due to the decrease of micropores in the deposited films. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | low-k | en_US |
dc.subject | carrier gas | en_US |
dc.subject | plasma-enhanced chemical vapor deposition | en_US |
dc.title | Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.tsf.2004.08.159 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 469 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 178 | en_US |
dc.citation.epage | 183 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000225724300032 | - |
Appears in Collections: | Conferences Paper |
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