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dc.contributor.authorChen, CWen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorWu, HHen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:37:10Z-
dc.date.available2014-12-08T15:37:10Z-
dc.date.issued2004-12-22en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2004.08.154en_US
dc.identifier.urihttp://hdl.handle.net/11536/25541-
dc.description.abstractWe have investigated the impact of Hz-plasma treatment on porous organosilicate glass (POSG) with etching process. The etching rate of trenches of nanoporous silica film was about 650 nm/min using fluorocarbon plasma. It is 1.6 times the etching rate of CVD oxide for the same etching condition due to the high porosity of POSG. We found that the profile of the intrinsic sample had mask undercutting. By the contrary, the mask undercutting effect was suppressed in the H-2,-plasma-treated sample. Based on the FTIR spectra analysis, the Si-H bonding was appeared after H-2-plasma treatment. The existence of Si-H bonds enhances to possess high C/F ratio and high polymerization rate at the sidewall surface. As a result, the spontaneous reactive etching at sidewall was suppressed. We also observed the pattern profile of porous silica was distorted after O-2-plasma ashing. This is due to the oxidation of hydrophobic groups and the formation of Si-OH bonds in the bulk. The interaction between the siloxanol groups and the gelation reaction occurred in the internal of porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. (C) 2004 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectdielectricsen_US
dc.subjectstressen_US
dc.subjectsurface morphologyen_US
dc.titleStudy on etching profile of nanoporous silicaen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2004.08.154en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume469en_US
dc.citation.issueen_US
dc.citation.spage377en_US
dc.citation.epage382en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000225724300064-
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