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dc.contributor.authorShih, YTen_US
dc.contributor.authorTsai, YLen_US
dc.contributor.authorYuan, CTen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorYang, CSen_US
dc.contributor.authorChou, WCen_US
dc.date.accessioned2014-12-08T15:37:10Z-
dc.date.available2014-12-08T15:37:10Z-
dc.date.issued2004-12-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1818712en_US
dc.identifier.urihttp://hdl.handle.net/11536/25548-
dc.description.abstractThis work investigates photoluminescence (PL) spectra from ZnSexTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePhotoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1818712en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume96en_US
dc.citation.issue12en_US
dc.citation.spage7267en_US
dc.citation.epage7271en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000225482400046-
dc.citation.woscount6-
Appears in Collections:Articles


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