Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

doi:10.1063/1.1818712

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DC 欄位	值	語言
dc.contributor.author	Shih, YT	en_US
dc.contributor.author	Tsai, YL	en_US
dc.contributor.author	Yuan, CT	en_US
dc.contributor.author	Chen, CY	en_US
dc.contributor.author	Yang, CS	en_US
dc.contributor.author	Chou, WC	en_US
dc.date.accessioned	2014-12-08T15:37:10Z	-
dc.date.available	2014-12-08T15:37:10Z	-
dc.date.issued	2004-12-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1818712	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25548	-
dc.description.abstract	This work investigates photoluminescence (PL) spectra from ZnSexTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1818712	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	96	en_US
dc.citation.issue	12	en_US
dc.citation.spage	7267	en_US
dc.citation.epage	7271	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000225482400046	-
dc.citation.woscount	6	-
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