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dc.contributor.authorHUANG, WCen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLEE, CLen_US
dc.date.accessioned2014-12-08T15:04:03Z-
dc.date.available2014-12-08T15:04:03Z-
dc.date.issued1994-04-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02671220en_US
dc.identifier.urihttp://hdl.handle.net/11536/2557-
dc.description.abstractPd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n=GaAs contact system. A value of 1.45 x 10(-6) OMEGA-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425-degrees-C for 90 s. It can withstand a thermal aging at 350-degrees-C for 40 h with its pc increasing to 2.94 x 10(-6) OMEGA-CM2 and for an aging at 410-degrees-C for 40 h with its p. increasing to 1.38 x 10(-5) OMEGA-cm2.en_US
dc.language.isoen_USen_US
dc.subjectGAASen_US
dc.subjectOHMIC CONTACTSen_US
dc.subjectRAPID THERMAL ANNEALING (RTA)en_US
dc.titlePD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIERen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF02671220en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.spage397en_US
dc.citation.epage401en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NE36500006-
dc.citation.woscount12-
Appears in Collections:Articles