Loss compensation in RF CMOS active inductor using a capacitor

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DC 欄位	值	語言
dc.contributor.author	Yang, JN	en_US
dc.contributor.author	Wu, MJ	en_US
dc.contributor.author	Lee, CY	en_US
dc.date.accessioned	2014-12-08T15:37:16Z	-
dc.date.available	2014-12-08T15:37:16Z	-
dc.date.issued	2004-12-01	en_US
dc.identifier.issn	0916-8524	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25606	-
dc.description.abstract	Loss compensation in a RF CMOS active inductor with using a capacitor is proposed. This simple compensation technique yields a negative conductance characteristic that can compensate for the constant internal loss of active devices. Simulation results show that the inductor obtains a maximum Q-value of 1.2E8, an inductance value in the range of 50 nH to 450 nH, and a 1.4E-6 Omega of minimum total equivalent loss in the range of 0.6 GHz to 1.3 GHz.	en_US
dc.language.iso	en_US	en_US
dc.subject	active inductor	en_US
dc.subject	negative conductance	en_US
dc.subject	Q-value	en_US
dc.subject	inductance	en_US
dc.title	Loss compensation in RF CMOS active inductor using a capacitor	en_US
dc.type	Article	en_US
dc.identifier.journal	IEICE TRANSACTIONS ON ELECTRONICS	en_US
dc.citation.volume	E87C	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2198	en_US
dc.citation.epage	2201	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000225776900037	-
dc.citation.woscount	0	-
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