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dc.contributor.authorChen, PLen_US
dc.contributor.authorChen, JHen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorYeh, CFen_US
dc.date.accessioned2014-12-08T15:37:19Z-
dc.date.available2014-12-08T15:37:19Z-
dc.date.issued2004-11-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2004.06.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/25661-
dc.description.abstractIn this study, an efficient approach for the removal of colloidal silica abrasives from the polished copper surface was proposed and demonstrated. This post-chemical mechanical polishing (CMP) cleaning process combines a buffing process with dilute HNO3/benzotriazole (BTA) aqueous solution for copper surface passivation and a polyvinyl alcohol (PVA) brush scrubbing process with wetting surfactants, Triton X-100, for colloidal silica removal. Buffing with HNO3/BTA aqueous solution was able to remove copper oxide and form the Cu(I)-BTA hydrophobic passivation. Scrubbing with Triton X-100 surfactant is to enhance the wettability on Cu(I)-BTA surface for the removal of residual silica abrasives. The wetting ability of Triton X-100 was determined by a contact angle and surface tension measurements. It was demonstrated that silica abrasives could be removed efficiently without copper corrosion by this cleaning process. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcopperen_US
dc.subjectcolloidal silica abrasiveen_US
dc.subjectpost-chemical mechanical polishing cleaningen_US
dc.subjectbenzotriazoleen_US
dc.subjectTriton X-100en_US
dc.titlePost-Cu CMP cleaning for colloidal silica abrasive removalen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2004.06.006en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume75en_US
dc.citation.issue4en_US
dc.citation.spage352en_US
dc.citation.epage360en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000225138100002-
dc.citation.woscount33-
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