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dc.contributor.authorTsai, M. A.en_US
dc.contributor.authorTseng, P. C.en_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.date.accessioned2014-12-08T15:37:20Z-
dc.date.available2014-12-08T15:37:20Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-55752-890-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/25676-
dc.description.abstract10% efficiency enhancement of the solar cell by Broad-band and Omnidirectional Antireflection Nanorod Arrays was demonstrated. The enhanced efficiency attributed to increased light entry and optical path in both the top cell and bottom cell. @2008 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEfficiency Enhancement InGaP/GaAs Dual-junction Solar Cell by Broad-band and Omnidirectional Antireflection Nanorod Arraysen_US
dc.typeArticleen_US
dc.identifier.journal2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000290513602249-
顯示於類別:會議論文