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dc.contributor.authorChiang, CCen_US
dc.contributor.authorChen, MCen_US
dc.contributor.authorLi, LJen_US
dc.contributor.authorWu, ZCen_US
dc.contributor.authorJang, SMen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:37:21Z-
dc.date.available2014-12-08T15:37:21Z-
dc.date.issued2004-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.7415en_US
dc.identifier.urihttp://hdl.handle.net/11536/25680-
dc.description.abstractIn this work, we investigate the effects of oxygen (O-2) and nitrogen (N-2) plasma treatments on the copper surface of aluminum/amorphous silicon-nitricarbide/copper (Al/alpha-SiCN/Cu) metal-insulator-metal (MIM) capacitors with respect to their leakage current and breakdown field. It is found that both the O-2- and N-2-plasma treatments have an adverse effect on the leakage current and breakdown field of MIM capacitors. The MIM capacitors with their Cu surfaces subjected to O-2- or N-2-plasma treatment exhibit a room-temperature leakage current density several orders of magnitude larger than that of the sample without plasma treatment at the same applied electric field. The room-temperature breakdown fields of the MIM capacitors with O-2- and N-2-plasma-treated Cu surfaces are 3.8 and 3.2 MV/cm, respectively, while that of the control sample without plasma treatment is 7.8MV/cm. The increased leakage currents and degraded breakdown fields of the O-2- and N-2-plasma-treated samples are attributed, respectively, to the presence of metastable Cu-O oxide and Cu-N azide at the Cu surfaces.en_US
dc.language.isoen_USen_US
dc.subjectplasma treatmenten_US
dc.subjectcopper surfaceen_US
dc.subjectdielectric breakdownen_US
dc.subjectCu-Oen_US
dc.subjectCu-Nen_US
dc.titleEffects of O-2- and N-2-plasma treatments on copper surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.7415en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue11Aen_US
dc.citation.spage7415en_US
dc.citation.epage7418en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000225582000010-
dc.citation.woscount3-
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