Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers

Abstract

In this article, the laser performance of the 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1 - x)N(x) quantum-well (QW) lasers with various GaAs(1 - x)N(x) strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs(1 - x)N(x) barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In(0.4)Ga(0.6)As(0.986)N(0.014) QW and GaAs(1 - x)N(x) barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs(1 - x)N(x) quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.