Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method

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DC 欄位	值	語言
dc.contributor.author	Wang, C. H.	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Ke, C. C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:37:23Z	-
dc.date.available	2014-12-08T15:37:23Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-55752-890-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25709	-
dc.description.abstract	Internal quantum efficiency (IQE) of InGaN-based ultraviolet light emitting diodes (LED) grown on patterned sapphire substrate (PSS) and flat sapphire were measured by photoluminescence and electroluminescence methods. The IQE improvement of PSS LED is significant. (C)2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Photoluminescence and Electroluminescence Method	en_US
dc.type	Article	en_US
dc.identifier.journal	2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000290513602298	-
顯示於類別：	會議論文