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dc.contributor.authorChang, C. H.en_US
dc.contributor.authorHsu, M. H.en_US
dc.contributor.authorChang, W. L.en_US
dc.contributor.authorSun, W. C.en_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2014-12-08T15:04:04Z-
dc.date.available2014-12-08T15:04:04Z-
dc.date.issued2011en_US
dc.identifier.isbn978-0-8194-8470-3en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/2574-
dc.identifier.urihttp://dx.doi.org/10.1117/12.876853en_US
dc.description.abstractIn this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The combined surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on passivated, micro-grooved silicon solar cells using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared, which is optically equivalent to a stack of two dielectric thin-films with step- and graded- refractive index profiles. The ITO nanowhiskers provide broadband anti-reflective properties (R < 5%) in the wavelength range of 350-1100nm. In comparison with conventional Si solar cell, the combined surface texture solar cell shows higher external quantum efficiency (EQE) in the range of 700-1100nm. Moreover, the ITO nanowhisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). Furthermore, the nanowhiskers also provide strong forward scattering for ultraviolet and visible light, favorable in thin-wafer silicon photovoltaics to increase the optical absorption path.en_US
dc.language.isoen_USen_US
dc.subjectphotovoltaicsen_US
dc.subjectindium-tin-oxideen_US
dc.subjectnanostructureen_US
dc.titleIndium-Tin-Oxide Nanowhiskers Crystalline Silicon Photovoltaics Combining Micro- and Nano-Scale Surface Texturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.876853en_US
dc.identifier.journalPHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIXen_US
dc.citation.volume7933en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000293511600058-
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