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dc.contributor.authorLai, LSen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:37:26Z-
dc.date.available2014-12-08T15:37:26Z-
dc.date.issued2004-10-15en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physc.2004.08.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/25757-
dc.description.abstractSuperconducting ring resonator with a Y0.7Ca0.3Ba2Cu3O7-delta ground plane was fabricated by using Y0.7Ca0.3Ba2Cu3O7-delta thin film deposited on both sides of a LaAlO3 (LAO) substrate. The resonator exhibits a high quality factor Q > 10(4) at T < 30 K, and from empirical relation,T-c/T-c,T-max = 1 - 82.6(p - 0.16)(2), we obtained the hole concentration p. By controlling the oxygen contents of the ring resonator, the hole concentration p was controlled from 0.218 to 0.088, determined by the empirical relation, in the same film. The temperature dependence of the resonance frequency, f(T), was then systematically studied. By using Chang's inductive formula and taking a functional form (lambda(5K)/lambda (T))(2) = 1 - (T/T-c)(2) at T < 0.6T(c), the London penetration depths lambda(5K) for various oxygen contents at 5K were obtained, respectively. Finally, it allows us to test the Uemura relation 1 /lambda(2)(5K) proportional to T-c from the over- to the underdoped regime in the same sample. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmicrowave ring resonatorsen_US
dc.subjectY0.7Ca0.3Ba2Cu3O7-deltaen_US
dc.subjectpenetration depthen_US
dc.titleMicrowave properties of a Y0.7Ca0.3Ba2Cu3O7-delta inicrostrip ring resonator with various hole concentrationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physc.2004.08.007en_US
dc.identifier.journalPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONSen_US
dc.citation.volume415en_US
dc.citation.issue3en_US
dc.citation.spage133en_US
dc.citation.epage138en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000224730400008-
dc.citation.woscount3-
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