標題: | DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking |
作者: | Meng, CC Wu, TH Lu, SS 電信工程研究所 Institute of Communications Engineering |
關鍵字: | GaInP;HBT;amplifier |
公開日期: | 5-十月-2004 |
摘要: | High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc. |
URI: | http://dx.doi.org/10.1002/mop.20377 http://hdl.handle.net/11536/25771 |
ISSN: | 0895-2477 |
DOI: | 10.1002/mop.20377 |
期刊: | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Volume: | 43 |
Issue: | 1 |
起始頁: | 67 |
結束頁: | 69 |
顯示於類別: | 期刊論文 |