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dc.contributor.authorHsu, K. S.en_US
dc.contributor.authorChiu, T. T.en_US
dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorChen, K. L.en_US
dc.contributor.authorShih, M. H.en_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChang, Yia-Chungen_US
dc.date.accessioned2014-12-08T15:37:36Z-
dc.date.available2014-12-08T15:37:36Z-
dc.date.issued2011-01-31en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3543839en_US
dc.identifier.urihttp://hdl.handle.net/11536/25859-
dc.description.abstractMicrodisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 mu m was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was achieved for this microdisk. A high threshold characteristic temperature of 77 K was also observed. It is found that the lasing wavelength matches closely with the first-order whispering-gallery mode of the cavity as obtained from the finite-element method simulation. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3543839]en_US
dc.language.isoen_USen_US
dc.titleCompact microdisk cavity laser with type-II GaSb/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3543839en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume98en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000286988400005-
dc.citation.woscount4-
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