標題: Vertical polymer phototransistor featuring photomultiplication due to base-field shielding
作者: Zan, Hsiao-Wen
Tsai, Wu-Wei
Meng, Hsin-Fei
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 31-Jan-2011
摘要: We introduce a vertical polymer phototransistor with low operational voltage (-1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552714]
URI: http://dx.doi.org/10.1063/1.3552714
http://hdl.handle.net/11536/25861
ISSN: 0003-6951
DOI: 10.1063/1.3552714
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 5
結束頁: 
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