完整後設資料紀錄
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dc.contributor.authorWu, Chung-Linen_US
dc.contributor.authorLee, Pei-Weien_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorChang, Lo-Yuehen_US
dc.contributor.authorChen, Chia-Haoen_US
dc.contributor.authorLiang, Chen-Weien_US
dc.contributor.authorYu, Puen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorRamesh, R.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:37:37Z-
dc.date.available2014-12-08T15:37:37Z-
dc.date.issued2011-01-21en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.83.020103en_US
dc.identifier.urihttp://hdl.handle.net/11536/25870-
dc.description.abstractAt the heterointerface of a top ferroelectric Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ultrathin film and a bottom La(0.7)Sr(0.3)MnO(3) (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.en_US
dc.language.isoen_USen_US
dc.titleDirect spectroscopic evidence of charge reversal at the Pb(Zr(0.2)Ti(0.8))O(3)/La(0.7)Sr(0.3)MnO(3) heterointerfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.83.020103en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume83en_US
dc.citation.issue2en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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