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dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorLee, Chung-Yangen_US
dc.contributor.authorLiu, Chun-Yien_US
dc.contributor.authorChen, Lih-Juannen_US
dc.contributor.authorTu, King-Ningen_US
dc.date.accessioned2014-12-08T15:37:37Z-
dc.date.available2014-12-08T15:37:37Z-
dc.date.issued2011-01-20en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp108686yen_US
dc.identifier.urihttp://hdl.handle.net/11536/25872-
dc.description.abstractWe report here both heterogeneous and homogeneous nucleation of epitaxial suicide of NiSi(2) in Si nanowires grown in [110] direction by in situ observation in high-resolution transmission electron microscopy (TEM). Owing to the excellent lattice match between Si and NiSi(2), a giant epitaxial step of 2-8 nm wide forms at the interface between Si and NiSi(2) during the growth of the latter. The step formation results in two suicide/Si interfaces parallel to each other in TEM observations. Heterogeneous nucleation of NiSi(2) occurs at the intersection where the step meets the interfaces. However, we have also observed the epitaxial growth of NiSi(2) having a single interface with the Si, i.e., without a giant step. Homogeneous nucleation of NiSi(2) occurs on the single interface. Incubation time of heterogeneous nucleation of NiSi(2) has been measured by high-resolution video to be much shorter than that of homogeneous nucleation. The overall growth rate of NiSi(2) for the case of heterogeneous nucleation is faster than that for the case of homogeneous nucleation. Kinetic analysis of both types of nucleation is presented for a direct comparison in order to have a better understanding of the nucleation events.en_US
dc.language.isoen_USen_US
dc.titleHeterogeneous and Homogeneous Nucleation of Epitaxial NiSi(2) in [110] Si Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp108686yen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume115en_US
dc.citation.issue2en_US
dc.citation.spage397en_US
dc.citation.epage401en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Articles