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dc.contributor.authorChen, C. C.en_US
dc.contributor.authorChen, Y-Zen_US
dc.contributor.authorHuang, Y-Jen_US
dc.contributor.authorSheu, J-Ten_US
dc.date.accessioned2014-12-08T15:37:37Z-
dc.date.available2014-12-08T15:37:37Z-
dc.date.issued2011-01-15en_US
dc.identifier.issn0956-5663en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.bios.2010.10.003en_US
dc.identifier.urihttp://hdl.handle.net/11536/25878-
dc.description.abstractIn this study, we used a biosensor chip featuring Abl tyrosine kinase-modified silicon nanowire field-effect transistors (SiNW-FETs) to detect adenosine triphosphate (ATP) liberated from HeLa cells that had been electrically stimulated. Cells that are cultured in high-ionic-strength media or buffer environments usually undermine the sensitivity and selectively of SiNW-FET-based sensors. Therefore, we first examined the performance of the biosensor chip incorporating the SiNW-FETs in both low- and high-ionic-strength buffer solutions. Next, we stimulated, using a sinusoidal wave (1.0V, 50 Hz, 10 min), HeLa cells that had been cultured on a cell-culture chip featuring interdigitated electrodes. The extracellular ATP concentration increased by ca. 18.4-fold after electrical stimulation. Finally, we detected the presence of extracellular ATP after removing a small amount of buffer solution from the cell-cultured chip and introducing it into the biosensor chip. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAdenosine triphosphateen_US
dc.subjectHeLa cellen_US
dc.subjectSilicon nanowire field-effect transistoren_US
dc.subjectIonic strengthen_US
dc.titleUsing silicon nanowire devices to detect adenosine triphosphate liberated from electrically stimulated HeLa cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.bios.2010.10.003en_US
dc.identifier.journalBIOSENSORS & BIOELECTRONICSen_US
dc.citation.volume26en_US
dc.citation.issue5en_US
dc.citation.spage2323en_US
dc.citation.epage2328en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000286904400086-
dc.citation.woscount6-
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