完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, C. C. | en_US |
dc.contributor.author | Chen, Y-Z | en_US |
dc.contributor.author | Huang, Y-J | en_US |
dc.contributor.author | Sheu, J-T | en_US |
dc.date.accessioned | 2014-12-08T15:37:37Z | - |
dc.date.available | 2014-12-08T15:37:37Z | - |
dc.date.issued | 2011-01-15 | en_US |
dc.identifier.issn | 0956-5663 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.bios.2010.10.003 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25878 | - |
dc.description.abstract | In this study, we used a biosensor chip featuring Abl tyrosine kinase-modified silicon nanowire field-effect transistors (SiNW-FETs) to detect adenosine triphosphate (ATP) liberated from HeLa cells that had been electrically stimulated. Cells that are cultured in high-ionic-strength media or buffer environments usually undermine the sensitivity and selectively of SiNW-FET-based sensors. Therefore, we first examined the performance of the biosensor chip incorporating the SiNW-FETs in both low- and high-ionic-strength buffer solutions. Next, we stimulated, using a sinusoidal wave (1.0V, 50 Hz, 10 min), HeLa cells that had been cultured on a cell-culture chip featuring interdigitated electrodes. The extracellular ATP concentration increased by ca. 18.4-fold after electrical stimulation. Finally, we detected the presence of extracellular ATP after removing a small amount of buffer solution from the cell-cultured chip and introducing it into the biosensor chip. (C) 2010 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Adenosine triphosphate | en_US |
dc.subject | HeLa cell | en_US |
dc.subject | Silicon nanowire field-effect transistor | en_US |
dc.subject | Ionic strength | en_US |
dc.title | Using silicon nanowire devices to detect adenosine triphosphate liberated from electrically stimulated HeLa cells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.bios.2010.10.003 | en_US |
dc.identifier.journal | BIOSENSORS & BIOELECTRONICS | en_US |
dc.citation.volume | 26 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 2323 | en_US |
dc.citation.epage | 2328 | en_US |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000286904400086 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |